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| APTGT150TDU60PG Triple Dual Common Source Trench + Field Stop IGBT(R) Power Module C1 C3 C5 VCES = 600V IC = 150A @ Tc = 80C Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies E5/E6 G1 G3 G5 E1 E1/E2 E3 E3/E4 E5 E2 E4 E6 G2 C2 G4 C4 G6 C6 Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Very low (12mm) profile * Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability * RoHS Compliant Max ratings 600 225 150 350 20 480 300A @ 550V Unit V June, 2006 1-5 APTGT150TDU60PG - Rev 1 C1 C3 C5 G1 E1/E2 E1 E2 G2 E3/E4 G3 E3 E4 G4 E5/E6 G5 E5 E6 G6 C2 C4 C6 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C A V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT150TDU60PG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 150A Tj = 150C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 150A R G = 3.3 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 150A R G = 3.3 VGE = 15V VBus = 300V IC = 150A R G = 3.3 Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min Typ 9200 580 270 115 45 225 55 130 50 300 70 0.85 1.5 4.1 5.3 Max Unit pF ns ns mJ mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=600V IF = 150A VGE = 0V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 250 500 Unit V A A IF = 150A VR = 300V di/dt =3000A/s www.microsemi.com 2-5 APTGT150TDU60PG - Rev 1 150 1.6 1.5 130 225 6.9 14.5 1.6 3.5 2 V ns C mJ June, 2006 APTGT150TDU60PG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.31 0.52 175 125 100 5 250 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M6 SP6-P Package outline (dimensions in mm) 5 places (3:1) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT150TDU60PG - Rev 1 June, 2006 APTGT150TDU60PG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 300 T J = 150C VG E=19V 300 TJ=25C 250 TJ=125C 250 TJ =150C IC (A) 200 150 100 50 0 0 0.5 1 TJ=25C 200 IC (A) 150 100 VGE=13V VGE=15V VGE=9V 50 0 1.5 VCE (V) 2 2.5 3 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 300 250 200 Transfert Characteristics 10 T J=25C Energy losses vs Collector Current VCE = 300V VGE = 15V R G = 3.3 T J = 150C Eoff 8 E (mJ) 6 IC (A) 150 100 50 0 5 6 7 8 TJ=125C TJ=150C TJ=25C Er 4 Eon 2 0 11 12 0 50 100 150 IC (A) Reverse Bias Safe Operating Area 350 Eon Eoff Eoff 9 10 200 250 300 VGE (V) Switching Energy Losses vs Gate Resistance 12 10 E (mJ) 8 6 4 2 Eon Er VCE = 300V VG E =15V I C = 150A T J = 150C 300 250 IF (A) 200 150 100 50 0 25 0 VGE=15V TJ=150C RG =3.3 0 0 5 10 15 20 Gate Resistance (ohms) 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 IGBT 0.05 0 0.00001 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT150TDU60PG - Rev 1 June, 2006 APTGT150TDU60PG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 50 100 IC (A) 150 200 Hard switching ZCS ZVS VCE=300V D=50% RG=3.3 T J=150C Forward Characteristic of diode 300 250 200 IC (A) 150 100 50 T J=25C T J=125C T J=150C T c=85C 0 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Diode 0.05 0 0.00001 Rectangular Pulse Duration in Seconds Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT150TDU60PG - Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein June, 2006 |
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